Photothermal Investigations of GaAs-Based Materials and Quantum-Well Structures.
Abstract
Photothermal deflection spectroscopy has been applied to GaAs samples with the ultimate goal of measuring the optoelectronic and thermal transport properties of GaAs based multiple quantum wells by this technique. Theoretical models have been developed as well as experimental investigations have been carried out. Both pulsed as well as cw (modulated) excitations have been considered.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 02, 1996
- Accession Number
- ADA316435
Entities
People
- R. Vyas
- Rachit Gupta
- S. Ang
- W. D. Brown
Organizations
- University of Arkansas