Research into the Behavior of SOI Devices Operating in Extreme Environments.
Abstract
This report describes (1) results of irradiation of GAA/SOI analog circuits, (2) quantum effects in GAA transisters, (3) high temperature operation of SOI magnetic sensors, (4) tungsten metallization on SOI devices, and (5) quantum wires made in SOI.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1996
- Accession Number
- ADA317750
Entities
People
- A. Vandooren
- J. P. Colinge
- J. P. Eggermont
- Jiayu Chen
- P. Francis
Organizations
- UCLouvain