Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices.

Abstract

We investigate both theoretically and experimentally high speed strained semiconductor lasers. We have developed a systematic experimental procedure to obtain the key high speed parameters of a semiconductor laser based on a measurement of the amplified spontaneous emission of a laser biased below threshold. We extract the gain, refractive index change, and linewidth enhancement factor spectra and compare with a complete theoretical model for the optical properties of strained semiconductors with excellent agreement. We also extend our measurement techniques to distributed feed back lasers and show that by a careful use of both theory and experiment we can obtain these device parameters along with the important distributed feedback cavity parameters.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1996
Accession Number
ADA319314

Entities

People

  • S. L. Chaung

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Communication Systems
  • Compound Semiconductors
  • Distributed Feedback Lasers
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Nonlinear Optics
  • Optical Properties
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Cascade Lasers
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing