Nonlinear Optical Characterizations of II-VI Semiconductor Compounds for Device Applications.
Abstract
In this AASERT program, graduate students were trained in the area of laser investigations of wide gap semiconductor materials such as ZnSe-based quantum wells and III-nitride heterostructures. The goal of the program was to study nonlinear optical properties for opto-electronic device applications. Blue semiconductor lasers and optical modulators were of particular interest to us. We have recorded several first observations: first femtosecond coherent four-wave-mixing spectroscopy in ZnSe/ZnCdSe quantum wells; first observation of high order (up to 7th order) optical nonlinearities in ZnSe/ ZnCdSe quantum wells. In fact, this is the highest order susceptibility observed in any semiconductors; first observation of two-photon pumped blue lasing in ZnSe; first observation of above room temperature (up to 450k) lasing in GaN. The lasing threshold was found to be not very sensitive to temperature. p2
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 18, 1997
- Accession Number
- ADA322626
Entities
People
- Jin-joo Song
Organizations
- Oklahoma State University–Stillwater