Polysilicon AMLCD Projector.
Abstract
A polysilicon thin film transistor (TFT) technology integrated with information of a light shield and a pixel electrode was transferred to a commercial integrated circuit foundry and was demonstrated to be optimized for manufacturing by successful fabrication of 1280 x 1024 prototype displays. Transmission and contrast ratio values suitable for a projection light valve were achieved. The 1280 x 1024 display was designed for optimum performance with the polysilicon TFT technology. Design-for-test features were included to permit wafer-level evaluation and repair. A detailed description of the design by block, including multiplexer, sample/hold, data driver, select scanner, and timing functions, was documented. A detailed set of specifications, including electrical characteristics, timing diagrams, optical characteristics, suggested operating procedures, and pin assignments, were defined. A complete process flow that integrates an ITO technology and topographical planarization with the underlying transistor architecture was demonstrated to be fully compatible with commercial integrated circuit manufacturing facilities. In addition, an efficient, manufacturing-ready technology to introduce hydrogen into TFT for achievement of optimum on-and off-state characteristics was achieved. Key requirements for high-yield manufacturing of the light valves were identified.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1996
- Accession Number
- ADA323961
Entities
People
- J. Atherton
- R. Smeltzer
Organizations
- Sarnoff Corporation