Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction.
Abstract
Exposure of the 6H-SiC(000l) sub Si surface to atomic H selectively removed Si and converted the (3x3) surface to a (1x1) surface as determined from the results of X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and temperature programmed desorption (TPD). Reduction and loss of the Si 2p XPS peak from the (3x3) surface were observed. A three-step oxide growth process is being developed. The system will allow for an integrated process to be used in the investigation of oxide growth on 6H- and 4H-SiC. Preliminary investigations of the surface preparation revealed that SiC is not as readily cleaned as Si.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1997
- Accession Number
- ADA325624
Entities
People
- Bayant Jayant Baliga
- M. O. Aboelfotoh
- R. S. Busby
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University