Vertical Cavity Laser Joint Study Program with Rome Laboratory.

Abstract

This effort investigated the development of short wavelength VCSEL (vertical cavity surface emitting laser) material for potential application in optical interconnects for radar signal processing subsystems. GaN is the material system used and growth via molecular beam epitaxy on sapphire substrates was extensively investigated. Dry etching studies were performed. Due to the poor quality of these initial growths, VCSELs could not be fabricated.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1997
Accession Number
ADA325856

Entities

People

  • William J. Schaff

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Diagrams
  • Diffraction
  • Electrical Engineering
  • Fabrication
  • Laser Applications
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Semiconductors
  • Signal Processing
  • Silicon Carbide
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy