Solution of 1-D Schrodinger and Poisson Equations in Single and Double Gate SOI MOS

Abstract

In this paper the self-consistent solution of Schrodinger and Poisson equations is applied to single and double gate SOI MOS structures. The reasons for possible advantages related to the presence of the two symmetric gates in the latter case are investigated.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1995
Accession Number
ADA331429

Entities

People

  • Antonio Abramo
  • Claudio Fiegna

Organizations

  • University of Ferrara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Charge Density
  • Electric Fields
  • Electron Density
  • Electrons
  • Equations
  • Fermi Levels
  • Inversion
  • Low Voltage
  • Peak Values
  • Poisson Equation
  • Simulations
  • Surface Roughness
  • Thickness
  • Transverse
  • Voltage

Fields of Study

  • Mathematics

Readers

  • Calculus or Mathematical Analysis
  • Integrated Circuit Design and Technology.