Dry-Etching Continuos Surface Profiles Into Infrared Semiconductor Materials.
Abstract
In this contract, SY Technology, Inc. has demonstrated and answered all of the technical objectives presented in the original proposal. First, we have shown that using MHA reactive ion etching to transfer continuous surface profiles into InSb substrates was not feasible using current production processing methods. This was the first technical objective. Second, we developed a precise photoresist exposure and development process to accurately replicate gray scale mask features. The photoresist which showed the most promise was the Shipley STR 1000 series photoresists. This was the second technical objective. Third, we were able to develop a process to successfiilly transfer continuous gray scale mask patterns into photoresist, a cmcial link in successfiilly making continuous surface profiles in any material. This was accomplished by means of an ion mill with oxygen. And finally, we were able to successfiilly etch continuous surface profiles into InAs and InSb This was the main goal of this SBJR research. As extra effort, beyond the requirements of this contract, we made a continuous gray scale mask of an operational off-axis field grating lens, transferred this pattern into photoresist, and etched the pattern into both InAs and InSb. At the end of this contract, SY Technology, Inc. will deliver not only a final report detailing the results of this research, but will also deliver an off-axis field grating lens in InSb, thus exceeding the goals of this contract This lens will be used by NVL in field equipment tests.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1998
- Accession Number
- ADA345298
Entities
People
- Randall L. Lindsey