Low Power GaAs Enhancement - Depletion Technology using Native Al2O3 as an Insulator
Abstract
The WiTech phase I objectives were to explore the feasibility of Al2O3 as a buffer layer insulator for GaAs-on-insulator (GOI) technology and as a gate insulator for GaAs-based MISFETs. specifically, we have: (1) investigated the oxidation process and its effect on active device layers, showing the very little or no detrimental effect of the oxidation on the active region can be achieved by using LT-AlGaAs buffer layers. (2) fabricated an measured the performance of GaAs MESFETs with Al2O3 as a buffer layer insulator demonstrating nearly 50% RF (3 GHz) power added efficiency at low operating bias. (3) fabricated and characterized MIS structures using Al2O3 as the insulator, showing the challenges and problems associated with using lateral steam-oxidation for producing a gate insulator.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 11, 1998
- Accession Number
- ADA345649
Entities
People
- Brian Thibeault