Silicon-Based Oxide/Silicon/Oxide Resonant Tunneling
Abstract
We explored two methods for forming SiO2/Si/SiO2 resonant tunneling diodes with crystalline silicon quantum wells. The first method, growth through voided oxide, was successful in demonstrating for the first time that crystalline Si can be grown through voids in the oxide. However conditions for forming the small void size needed to block electron transport, while allowing nucleation of silicon through the oxide, were not found. A systematic search of the growth temperature- pressure space showed that these conditions do not come naturally for the (100) and (111) surfaces. For this reason, we adopted a lateral-over-growth approach in the final year to fabricate the RTD. The SiO2/Si/SiO2 resonant tunneling diode grown using the lateral silicon overgrowth process did not show the desired negative differential resistance characteristics, but test on these diodes indicate that the desired heterostructure has not yet been achieved. This process has now been transferred to DARPA's Si-Based Quantum MOS Technology Development program (Contract No. F49620-96-C-0006), where it will be used for lateral overgrowth of RTD heterostructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1998
- Accession Number
- ADA348991
Entities
People
- Alan Seabaugh
- Robert M Wallace
Organizations
- Texas Instruments