Dry-etching Continuous Surface Profiles into Infrared Semiconductor Materials.

Abstract

Etching high efficiency diffractive optical elements (DOEs) into InSb substrates, using multiple binary masks, has proven to be problematic. This microfabrication method (sometimes. called binary optics technology) is time-consuming, costly and sensitive to alignment errors. Other major problems unique to InSb and the multi-mask process, are polymer buildup and substrate fracturing as a result of stresses experienced in subsequent etch levels. Since these do not appear to be problems with a single etch process, a new process is needed which achieves fabrication of high efficiency DOEs with only a single mask and a single etch step. This effort investigates the application of gray scale mask technology to etching high efficiency DOEs and micro-optical elements in InSb and InAs.

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Document Details

Document Type
Technical Report
Publication Date
Aug 27, 1998
Accession Number
ADA351948

Entities

People

  • Randall L. Lindsey

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Data Analysis
  • Dry Etching
  • Elements
  • Etching
  • Experimental Design
  • Fabrication
  • Flow Rate
  • Gray Scale
  • Materials
  • Night Vision
  • Optical Materials
  • Optics
  • Reactive Ion Etching
  • Semiconductors
  • Simulations

Readers

  • Economics
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene