Bulk Gallium Nitride Growth.

Abstract

Gallium Nitride (GaN), a direct bandgap semiconductor, has a room temperature energy gap (Eg) of 3.39 eV. It forms a completely miscible solution with In (which decreases Eg) and Al (which increases Eg). Thus, light output wavelength can be tuned via bandgap engineering or via the introduction of appropriate impurities to form luminescent color centers. In principle, LEDs and lasers spanning the entire visible spectrum can be fabricated with (Ga-In-Al)N system.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1998
Accession Number
ADA353635

Entities

People

  • J. S. Harris

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Ground and Sea Platforms
  • Sensors

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Ecology
  • Electronics Industry
  • Engineering
  • Gallium Nitrides
  • High Pressure
  • High Temperature
  • Light Sources
  • Mass Production
  • Materials
  • Melting Point
  • Optical Materials
  • Semiconductors
  • Single Crystals
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics