EPR and Electrical Investigations of Point Defects and Hopping Motion in SiC Heavily Doped with Nitrogen

Abstract

This report results from a contract tasking Institute of Semiconductor Physics, National Academy of Sciences, Ukraine.

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 1997
Accession Number
ADA353811

Entities

People

  • Ekaterina Kalaboukhova

Organizations

  • National Academy of Sciences of Ukraine

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Electrons
  • Energy
  • Heat Of Activation
  • Integrals
  • Intensity
  • Low Temperature
  • Materials
  • Nitrogen
  • Paramagnetic Resonance
  • Physics
  • Point Defects
  • Semiconductor Physics
  • Semiconductors
  • Silicon Carbide
  • Spectra

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics