International Conference on Shallow-Level Centers in Semiconductors (8th) SLCS '98, Held in Montpellier, France on July 27-30, 1998

Abstract

Partial contents: Metal-insulator transitions and defect interactions; Bound excitons and Raman scattering at shallow centers; Wide-gap I; Wide-gap II-SiC; Poster Session: Hydrogen passivation and related topics, thermal donors; Low-D systems I; Shallow excited states of deep level impurities and shallow-deep crossover; New methods in experiment. New methods in theory; Low-D systems II; Wide-gap III.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1998
Accession Number
ADA353913

Entities

Organizations

  • University of Montpellier

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Crystal Structure
  • Electronics Laboratories
  • Energy Bands
  • Materials Science
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Power Electronics
  • Quantum Wells
  • Quantum Yields
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Physics
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Academic Conference Management
  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics