In-Situ Laser Doping of Silicon Carbide. Presentation at the March 1998 Meeting of the American Physical Society
Abstract
This Technical Document is a compilation of posters presented at the March 1998 meeting of the American Physical Society in Los Angeles, CA. It summarizes the inherent difficulties in fabricating silicon carbide microelectronic devices, the novel laser setup used to form electrical junctions in silicon carbide, detailed analyses of the laser-processed materials, and applications for this technique. This is the first reported demonstration of incorporation and activation of dopants into silicon carbide using excimer laser recrystalization in the presence of a doping ambient.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1998
- Accession Number
- ADA354054
Entities
People
- A. D. Ramirez
- S. D. Russell
Organizations
- Naval Information Warfare Systems Command