Modulation-Doped Field Effect Transistors for High-Power Microwave Applications.

Abstract

The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1997
Accession Number
ADA355858

Entities

People

  • Ronald W. Grundbacher

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Chemical Vapor Deposition
  • Chemistry
  • Dielectric Permittivity
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Materials
  • Metal-Semiconductor Junctions
  • Photolithography
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Transistors

Fields of Study

  • Physics

Readers

  • Economics
  • Microwave Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy