SiC Discrete Power Devices
Abstract
A first order analysis, to determine the voltage-ratings up to which unipolar devices have lower forward voltage drop than bipolar devices, is performed. Further, problems associated with the operation of a SiC MOSFET and alternatives to the MOSFET are considered. The performance of a 1000 V 4H-SiC U-MESFET was studied using numerical simulations and the results are presented. Problems associated in fabricating the U-MESFET structure are discussed. In addition, a novel trench-gate heterojunction FET (HJFET) structure is analyzed. In addition, a novel planar lateral channel SiC high power JFET is described. A novel planar lateral channel SiC MESFET structure with vertical current flow in the drift region is also proposed and demonstrated by modeling and fabrication. Further, a novel planar accumulation channel SiC MOSFET structure called ACCUFET is reported. The problems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFETs are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 momega-sq cm at room temperature for a gate bias of only 5 V. A comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs is presented. Finally, the design and development of process routes leading to 4" diameter SiC substrates are described.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1999
- Accession Number
- ADA358651
Entities
People
- B. Vijay
- Bayant Jayant Baliga
- P. M. Shenoy
- R. K. Chilukuri
- Robert F Davis
Organizations
- North Carolina State University