European Conference on Silicon Carbide and Related Materials (2nd), Held in Montpeller, France on September 2-4, 1998
Abstract
Partial Contents: (1) Progress in SiC: from material growth to commercial device development; (2) Advances in SiC materials and devices: an industrial point of view; (3) State of the art in the modelling of SiC sublimation growth; (4) Mathematical simulation of mass transfer, thermal transfer, and stress formation under silicon carbide boules growth; (5) Transport phenomena during sublimation growth of bulk SiC crystals; (6) Near-thermal equilibrium growth of SiC by physical vapor transport; (7) Analysis on defect generation during the SiC bulk growth process; (8) Prospects in the use of liquid phase techniques for the growth of bulk silicon carbide crystals; (9) Seeded sublimation growth at 6H and 4H-SiC crystals; (10) Influence of reactor cleanness and process condition on the growth by PVT and the purity of 4H and 6H-SIC crystals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 04, 1998
- Accession Number
- ADA359225
Entities
Organizations
- University of Montpellier