Moderated Degradation Enhancement of Lateral Pnp Transistors Due to Measurement Bias

Abstract

Enhanced low-dose-rate gain degradation of ADI RF25 lateral pnp transistors is examined as a function of the bias at which the gain is measured. Degradation enhancement at low dose rates diminishes rapidly with increasing measurement bias between the emitter and the base. Device simulations reveal that interface trap charging, field effects from oxide trapped charge and emitter metallization, base series resistance and high-level carrier injection all contribute to this behavior. As a practical consequence, accelerated hardness assurance tests of this device require higher irradiation temperatures or larger design margins for low power applications.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1999
Accession Number
ADA363794

Entities

People

  • D. C. Mayer
  • Hugh Barnaby
  • R. C. Lacoe
  • R. D. Schrimpf
  • S. C. Witczak

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Corporations
  • Degradation
  • Dose Rate
  • Electronics
  • Energy Bands
  • Engineering
  • Fermi Levels
  • Hardness
  • Ionizing Radiation
  • Measurement
  • Pnp Transistors
  • Radiation
  • Resistance
  • Simulations
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Plasma Physics.