Large Area Lateral Epitaxial Overgrowth (LEO) of Gallium Nitride (GaN) Thin Films on Silicon Substrates and Their Characterization
Abstract
Gallium nitride films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. Analysis by SEM and TEM are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1999
- Accession Number
- ADA366020
Entities
People
- E. P. Carlson
- K. Linthicum
- Robert F Davis
- T. Gehrke
- T. P. Smith
Organizations
- North Carolina State University