Radiation-Hardened Silicon-on-Insulator 0.8-Micrometer Technology Design Rules

Abstract

This document describes design rules for a radiation-hardened silicon-on-insulator (RHSOI) process presently under development at SSC San Diego. SSC San Diego's targeted design rules are an outgrowth of CMOSN 1 .0-micrometer design rules, with a few modifications for compatibility with future system requirements. Alternatively, CMOSN 1.2-micrometer design rules may be used.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1999
Accession Number
ADA366039

Entities

People

  • B. W. Offord
  • J. S. Ruthberg

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Complementary Metal-Oxide Semiconductors
  • Dielectrics
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Military Applications
  • Oxides
  • Radiation
  • Resistance
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Very Large Scale Integration

Fields of Study

  • Physics

Readers

  • Inertial Navigation Systems.
  • Maritime and Naval Warfare Studies
  • Systems Analysis and Design

Technology Areas

  • Microelectronics