Radiation Physics and Reliability Issues in III-V Compound Semiconductor Nanoscale Heterostructure Devices

Abstract

We have investigated the following three types of devices in this research program: (1) Heterojunction Bipolar Transistors (2) High Electron Mobility Transistors and (3) Resonant Tunneling Diodes. The following three types of radiation were used in our investigations: (a) Gamma radiation (b) Electron radiation and (c) Neutron radiation. Electrons constitute an important component of the trapped radiation in the earth's magnetic field (Van Allen's belt). Neutron and gamma radiation are encountered in the weapon's environment. Neutrons are also generated by the interaction of cosmic rays with earth's atmosphere.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1999
Accession Number
ADA380091

Entities

People

  • Stephen M. Goodnick

Organizations

  • Oregon State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Gamma Rays
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Ionizing Radiation
  • Power Electronics
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Physics

Technology Areas

  • Microelectronics