Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

Abstract

The program was to determine the potential performance advantages of integrating resonant tunneling diodes (RTDs) with complementary metal oxide semiconductor (CMOS) technology. In this program, a broad suite of circuits was fabricated and evaluated for logic memory, optoelectronic, and mixed-signal applications. We conclude that mixed-signal RT-CMOS circuits have performance advantages for niche applications in the short term, and broad use in logic when silicon-based RT technology reaches production maturity.

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1999
Accession Number
ADA382086

Entities

People

  • Berinder Brar
  • Moise

Tags

DTIC Thesaurus Topics

  • Complementary Metal-Oxide Semiconductors
  • Digital Circuits
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Integrated Circuits
  • Logic Gates
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Resonant Tunneling Diodes
  • Semiconductors
  • Tunnel Diodes

Readers

  • Computer Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics