Large Area, High Speed Photodiode Using Metal-Semiconductor Metal (MSM) Device
Abstract
The technical objectives of Phase I were to develop the program specifications design the large area, high speed photodetector to these specifications, and completely characterize the MSM device optically for use in a prototype unit to be fabricated during the Option. The program specifications included development of a photodetector with a 10 mm area, gain greater than 1000, noise figure less than 1.5 dB, and bandwidth greater than 10 GHz. The plan for the design of the 10 GHz photodetector was developed in a two step process. First a lower bandwidth prototype will be evaluated where the anode replacement of the IPD is the MSM device. The MSM would provide an increased bandwidth of the IPD from 2 GHz to 4 GHz. Design, fabrication, and characterization of the MSM was the main focus of the Phase I work. Information gained from the prototype would be used to fine tune the design for the 10 GHz photodetector. The initial design of the MSM for operation to 5 GHz was performed using a simple one dimensional photodetector model. An MSM with area 300 sq microns electrode width of 8 microns and gap of 4 microns was determined to be the optimal geometry. The electron bombardment gain of this device was predicted to be 1450. Although, these one dimensional models are adequate for initial design, a two dimensional model of electron bombardment performance was developed. Using this new model, a bandwidth of 4 GHz and gain of 1055 were predicted for the above MSM under electron bombardment. Characterization results of the fabricated MSM device show excellent DC characteristics and a measured bandwidth of 4.1 GHz. Therefore, it can be assumed that the models developed can closely predict the MSM performance under electron bombardment.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 14, 1998
- Accession Number
- ADA382992
Entities
People
- Peter Herczfeld
- Robert Fischl
- Tamera Yost