Innovative Approaches to AlGaInN Homoepitaxial Thin Films
Abstract
Using the Flow Modulation Epitaxial Technique in an Organometallic Vapor Phase Epitaxial (OMVPE) reactor, we have discovered a simple process which produces epitaxial lateral overgrowth (ELO) of GaN-based materials directly on SiC sapphire and silicon substrates patterned with silicon nitride. The key feature of this process is the use of a high temperature AlGaN nucleation layer which wets the exposed substrate surface and grows smoothly in mask windows without significant nucleation on the silicon nitride mask. Subsequent deposition of GaN results in relatively defect free materials grown laterally over the mask. For growth on silicon the high temperature AlGaN nucleation layer is replaced by AlN where, under proper growth conditions, high mobility 2DEG have been realized for the first time.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 19, 2001
- Accession Number
- ADA389212
Entities
People
- James Shealy
Organizations
- Cornell University