Novel SiC High Power IC Technology
Abstract
The devices used in the military need to be operated at high voltage, high temperature and high frequency. Silicon Carbide is an attractive material for the development of such devices. SIC has the critical field ten times higher than that of the silicon. This implies that lateral RESURF devices made in SIC can support the same breakdown voltage in a much smaller drift length as compared to the silicon devices. In our project we are using the concept of Lateral RESURF device to obtain diodes and MOSFETs having high breakdown and small specific on-resistance From the results of two dimensional numerical simulations on the RESURF devices. It was found that in RESURF diodes high breakdown voltage (>2000V) is possible for the RESURF dose of up to 2 x 10(exp 13)/sq cm, which is 1020 times higher than for silicon devices. Also in LATERAL RESURF MOSFETs high breakdown voltage (>1800) was possible for RESURF dose of up to 1 x 10(exp 13)/sq cm, which is 5-10 times higher than for silicon MOSFETs. The specific on resistance of these devices was found to be less than 100 mohm-sq cm. The vertical channel structure is more suitable for a power device because of higher device density and because of reduction in the electric field crowding in the device. At the same time lateral devices offer simplicity in fabrication. To optimize a Power IC it will be good to have both, vertical and lateral devices. The vertical isolation layer is formed by creating deep level traps through ion implantation of light neutral ions, such as hydrogen and helium. It is demonstrated that the 4H-SiC lateral N-channel MOSFETs and P-channel MOSFETs can be fabricated in the thin active SiC layer formed on top of a high resistivity isolation layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2001
- Accession Number
- ADA391275
Entities
People
- A. Venkateswaran
- Bayant Jayant Baliga
- P. Mehrotra
- P. R. Singh
- S. Sonkusale
Organizations
- North Carolina State University