Engineering Support for High Power Density Gallium Nitride Microwave Transistors

Abstract

Continuous and pulsed RF and IV on-wafer characterization was performed on gallium nitride high electron mobility transistors supplied by three independent sources. Measurements were performed over a range of temperatures and bias conditions to permit an indepth understanding of self-heating effects. Analysis was also performed to investigate substrate effects.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 2001
Accession Number
ADA397860

Entities

People

  • H. M. Harris
  • J. Laskar
  • S. Nuttinck

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Communication Systems
  • Compound Semiconductors
  • Electron Mobility
  • Electronics
  • Electronics Laboratories
  • Engineering
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Modules (Electronics)
  • Monolithic Microwave Integrated Circuits
  • Multiple Access
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors
  • Wireless Communications

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics