Direct Deposition of Low Resistance Thermally Stable Ohmic Contacts to n-SiC

Abstract

Ni2Si Ohmic contacts were fabricated via pulsed laser deposition on n-SiC. The contacts' electrical, structural, compositional, and surface morphological properties were investigated as a function of annealing temperatures ranging from 700 to 950 deg C. The as-deposited and 700 deg C annealed contacts were non-Ohmic. Annealing at 950 deg C yielded excellent Ohmic behavior, an abrupt void-free interface, and a smooth surface morphology. No residual carbon was present within the contact metallization or at the contact-SiC interface, and the contact showed no appreciable thickness increase as a result of the annealing process. The results demonstrate that aside from maintaining the desirable electrical integrity associated with Ni and Ni/Si Ohmic contacts, the Ni2Si Ohmic contacts possessed improved interfacial, compositional, microstructural, and surface properties which are required for reliable high temperature and high power device operation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2001
Accession Number
ADA399248

Entities

People

  • C. W. Hubbard
  • J. D. Demaree
  • J. K. Hirvonen
  • M. C. Wood
  • M. H. Ervin
  • Melanie W. Cole
  • P. C. Joshi

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Electrical Properties
  • Electron Spectroscopy
  • Electronics
  • Engineering
  • High Temperature
  • Materials
  • Materials Science
  • Mechanical Properties
  • Metal-Semiconductor Junctions
  • Military Research
  • Roughness
  • Scattering
  • Silicon Carbide
  • Spectra
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition