Radiation Effects on Multi-Junction Solar Cells

Abstract

The GaInP2/GaAs/Ge monolithic high efficiency triple junction cell is the state of the art multijunction solar cell for space applications. Numerous labs have undertaken investigation into the stability of GaInP2/GaAs/Ge in response to electron radiation. Electron radiation experiments have shown that the degradation of GaInP2/GaAs/Ge solar cells is mainly caused by a decrease of the short circuit current (Isc). The investigation and interpretation of the damage mechanism from electron irradiation in Spectrolab's GaInP2/GaAs/Ge triple junction cell is the purpose of this thesis. Current voltage characteristics were measured to establish beginning of life (BOL) parameters of the solar cells and the changes that occur due to irradiation (EOL).

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2001
Accession Number
ADA401081

Entities

People

  • Tommy L. Fifer

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Charged Particles
  • Cosmic Rays
  • Crystal Lattices
  • Electric Power
  • Electron Irradiation
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Ionizing Radiation
  • Linear Accelerators
  • P-N Junctions
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells
  • Solar Energy

Fields of Study

  • Materials science

Readers

  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space