Large Area Heteroepitaxial Growth Using Compliant Substrates
Abstract
In situ relaxed SiGe epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates was achieved. The first semi-quantitative theory for the mechanism of the reduction of dislocation density in epilayers grown on compliant substrates was developed. High mobility two-dimensional electrons in AlGaN/GaN heterostructures were prepared on sapphire substrates by molecular beam epitaxy (MBE). Sb was used for the first time as surfactant to improve the growth of GaN. Also reported are many firsts, including the exploitation of strain-modulated epitaxy, the use of LGO substrate for GaN substrate removal, and the demonstration of GaN devices bonded to Si enabled by bonded substrate removal.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 02, 2002
- Accession Number
- ADA403964
Entities
People
- Wen I. Wang
Organizations
- Columbia University