Radiation Sensitivity of Unique Memory Devices
Abstract
Working protonated gate MOSFET transistor memories with gate lengths down to 5 microns and gate oxide thicknesses down to 20 nm have been produced using standard Si-based technological steps. Hysteresis in the source-drain current-versus-gate voltage as large as - 11 V was measured in 40 nm gate oxide transistors. The sensitivity of the memory to X rays was measured using an ARACOR source up to total accumulated doses of 2 Mrad (SiO2) . No variation in the hysteresis voltage (which would correspond to a loss of protons) was ascertained, nor was there measurable data loss (by deviation of the current/voltage characteristic which would result if the protons redistributed themselves in the gate oxide). A buildup of fixed oxide charge in the gate oxide due to irradiation was measured and it was characteristic of that expected in an unhardened oxide.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 24, 2002
- Accession Number
- ADA405716
Entities
People
- Roderick A. Devine
Organizations
- University of New Mexico