Hetero-Junction Pumped Er-Light Emitter for Integrated Optical Communication

Abstract

This report discusses the Phase I results in achieving light emission from Erbium doped Gallium Nitride materials. Erbium is a rare earth material which can emit at specific wavelengths of light, both in the visible and infrared regions of the spectrum. Erbium-doped layers were grown in GaN-based junctions by the molecular beam processing technique. The effects of Erbium in GaN were characterized using photoluminescence (PL) and catholuminescence (CL). Prototype devices were fabricated and electrically pumped light emission from the Er LEDs was observed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 13, 2003
Accession Number
ADA417917

Entities

People

  • Peter Chow

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Argon Lasers
  • Band Gaps
  • Compound Semiconductors
  • Detectors
  • High Electron Mobility Transistors
  • Luminescence
  • Materials
  • Measurement
  • Metals
  • Modules (Electronics)
  • Molecular Beams
  • Optical Communications
  • Optical Properties
  • Optics
  • Quantum Computing
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics