Electronic, Optical and Structural Properties of 6.1 Angstrom III-V Semiconductor Heterostructures for High-Performance Mid-Infrared Lasers

Abstract

The goal of this program was to develop new insight into the physics of 6.1-angstrom heterostructures through combined experiment and theoretical efforts. Specifically, time-resolved ultrafast optical and scanning-tunneling microscopy (STM) experimental techniques were used to study the electronic, optical, and structural properties

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2003
Accession Number
ADA421467

Entities

People

  • Thomas F. Boggess

Organizations

  • University of Iowa

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Antimonides
  • Band Structures
  • Contracts
  • Energy Bands
  • Heterojunctions
  • Lasers
  • Materials
  • Physical Properties
  • Quantum Wells
  • Repetition Rate
  • Semiconductor Lasers
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Structural Properties

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene