Low Noise Amplifiers Based on Lattice Engineered Substrates
Abstract
In this program we are developing novel strain relaxed templates for device applications including low noise amplifiers. The approach we are investigating utilizes the process of relaxation of a coherent hypercritical thickness strained semiconductor overlayer (e.g., InGaAs). In the first two years of this program, we had focused on the relaxation of a strained layer in direct contact with an oxidizing Al containing semiconductor (AlAs or AlGaAs). In the third year of this program, most of our efforts were focused on determining the origin of the commonly observed cross-hatch morphology in strain-relaxed misfitting layers. We have also discovered new dislocation-related relaxation mechanisms in the group III nitrides. Finally, we have also provided new insight and modeling of threading dislocation reduction in lateral epitaxial overgrowth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2004
- Accession Number
- ADA427969
Entities
People
- James S. Speck
- Umesh Mishra
Organizations
- University of California Regents