High Frequency Performance of Self-Assembled Monolayer (SAM) Organic FETs

Abstract

As a step towards developing FETs with a device length of a single molecule, modeling shows that FET action in FETs of very short channel length are most likely to occur for long (>5 nm) channel lengths. Therefore self-assembled monolayers of a stacked 11-mercaptoundecanoic acid (MUA) were grown to define an arbitrarily long device length (in excess of 10 nm). The electrical properties of these films were investigated with a self-aligned mesa structure which maximizes device yield by minimizing the device area while still retaining compatibility for the first time with integrated metal wiring. Devices with between 3-7 MUA layers (device length up to 11 nm) were insulating, with currents that decreased exponentially with the number of MUA layers.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2004
Accession Number
ADA430106

Entities

People

  • James C. Sturm

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Current Density
  • Dielectrics
  • Electric Fields
  • Electrical Properties
  • Fabrication
  • Field Effect Transistors
  • Films
  • Frequency
  • Geometry
  • High Density
  • Materials
  • Measurement
  • Molecules
  • Monomolecular Films
  • Self Assembled Monolayers
  • Thin Films
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics