1.55 Vertical Cavity Surface Emitting Laser With Dielectric Mirrors
Abstract
Design, processing and characterization of high-speed implanted-apertured, lateral-current-injection, dielectric-mirror vertical cavity surface emitting laser and InGaAs based MEM detectors and mixers. We have achieved following goals: I. Designed 1,55 micron InP/InGaAs based tunnel junction structure and purchased two samples with good quality. The VCSEL is being processed. II. Designed SiO2/TiO2 based top and bottom DBR mirrors. III. Performed the thermal simulation of flip-chip double-side dielectric DER mirror VCSEL. IV. Collaborated with Keith Aliberti and Paul Shen in ARL to fabricate InGaAs based MSM detectors and mixer. V. Simulation of Pulse and DC Responses for Schottky Barrier Enhanced InGaAs MSM Photo-Detectors And OE Mixers VI. Developed Submicron Inter-Digitated Finger Process To Reduce the Device Capacitance And Dark Current VII. Working with ARL To Redesign the MSM Array Mask To Reduce Device Parasitic Capacitances.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 25, 2005
- Accession Number
- ADA432899
Entities
People
- Fan Ren
- Stephen Pearton
Organizations
- University of Florida