HgCdTe Heteroepitaxy on Si Substrates for Low-Cost, Large Format, Dual-Band Infrared Focal Plane Arrays

Abstract

Recent advancements in HgCdTe heteroepitaxy on silicon substrates are described. The aim of these efforts is the extension of the spectral response of HgCdTe-on-Si-based devices into the long wavelength infrared region. The achievement of this aim will enable low-cost, third generation infrared focal plane arrays.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2004
Accession Number
ADA433535

Entities

People

  • D. Edwall
  • J. Arias
  • J. G. Pasko
  • J. H. Dinan
  • J. K. Markunas
  • J. Molstad
  • L. A. Almeida
  • M. Carmody
  • M. Groenert

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Arrays
  • Detection
  • Detectors
  • Diffraction
  • Epitaxial Growth
  • Fabrication
  • Focal Plane Arrays
  • Focal Planes
  • Long Wavelengths
  • Materials
  • Quantum Efficiency
  • Readout Integrated Circuits
  • Semiconductors
  • Substrates
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Phased Array Antenna Design.
  • STEM Education
  • Thin Film Deposition Science.