Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors
Abstract
Thin films of GaN, Al(sub 0.1)Ga(sub 0.9)N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al(sub 0.1)Ga(sub 0.9)N after annealing at 675 C; for Cr implanted p-GaN after annealing at 750 C; for Mn or Ni implanted p-GaN after annealing at 675 C; for Cr implanted ZnO after annealing at 700 C; for Mn implanted ZnO after annealing at 675 C; and for Ni implanted ZnO after annealing at 650 C. Maximum coercive field strengths were found for Cr implanted Al(sub 0.1)Ga(sub 0.9)N after annealing at 750 C; for Mn implanted Al(sub 0.1)Ga(sub 0.9)N after annealing at 675 C; for Ni implanted Al(sub 0.1)Ga(sub 0.9)N after annealing at 700 C; for Cr or Mn implanted p-GaN after annealing at 725 C; for Ni implanted p-GaN after annealing at 675 C; for Cr or Ni implanted ZnO after annealing at 725 C; and for Mn implanted ZnO after annealing at 725 C. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2005
- Accession Number
- ADA434194
Entities
People
- Brian P. Feller
Organizations
- Air Force Institute of Technology