InAs HVT for Extremely Low Power and High Speed Applications

Abstract

Detailed experiments were carried out to establish the working epitaxial layer structure for the InAs high velocity transistors (InAs HVT). Appropriate InAlAsSb barrier and high purity InAs were incorporated into the final InAs HVT transistor structure. Molecular beam epitaxial (MBE) growth parameters were optimized for the InAs HVT. InAs HVT has been achieved, showing the first such vertical structure with world record transconductance and high speed device parameters. The input, output, and transfer characteristics of an InAs HVT in the common-base configuration were characterized. All the device characteristics were much improved than any previous established results, thus confirming the advantages of the innovative InAs HVT device design.

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Document Details

Document Type
Technical Report
Publication Date
Jul 22, 2005
Accession Number
ADA438567

Entities

People

  • Wen I. Wang

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accumulators
  • Air Force
  • Circuits
  • Contracts
  • Electrical Engineering
  • Electron Emission
  • Electron Mobility
  • Electrons
  • Emitters
  • Energy Bands
  • Equivalent Circuits
  • Frequency
  • Materials
  • Mobility
  • Molecular Beams
  • Transconductance
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology