Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide

Abstract

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines the optical quality of seven OPGaAs crystal samples and explores the design of an optical parametric oscillator (OPO) device. Direct transmission and scattering measurements at 2.05-mum were taken as a function of position across the incident face of each sample. Scattering, absorption, and reflection coefficients for each sample were quantified. Nonlinear output from the OPO was not achieved before the optical coating failed. A direct comparison of OPGaAs crystal performance based on source of manufacturing is reported. OPO design parameters are summarized with recommendations for future efforts.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 2006
Accession Number
ADA450196

Entities

People

  • Joshua W. Meyer

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Carbon Dioxide Lasers
  • Detectors
  • Gallium Arsenides
  • Laser Applications
  • Laser Beams
  • Lasers
  • Manufacturing
  • Materials Processing
  • Measurement
  • Military Research
  • Optical Coatings
  • Optical Materials
  • Optics
  • Oscillators
  • Refractive Index

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Directed Energy
  • Microelectronics