Growth and Doping of SiC-Thin Films on Low-Stress, Amorphous Si3N4/Si Substrates for Robust Microelectromechanical Systems Applications
Abstract
The N2-doped 3C-SiC thin films have been grown by low-pressure, chemical vapor deposition (LPCVD) on amorphous Si3N4/p-Si (111) substrates using the single, organosilane-precursor trimethylsilane [(CH3)3SiH]. The effects of N2 flow rate and growth temperature on the electrical properties of SiC films were investigated by Hall-effect measurements. The electron-carrier concentration is between 1017 1018/cm3. The lowest resistivities at 400 K and 300 K are 1.12 3 1022 and 1.18 3 1021 cm, respectively. The corresponding sheet resistances are 75.02 V/h and 790.36 V/h. The SiC film structure was studied by xray diffraction. The 3C-SiC films oriented in the ^111& direction with a 2u peak at 35.5 and line widths between 0.18 0.25 were obtained. The SiC/Si3N4 interface is very smooth and free of voids. The fabrication of microelectromechanical (MEMS) structures incorporating the SiC films is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2002
- Accession Number
- ADA457818
Entities
People
- A. J. Steckl
- J. Scofield
- Lei Cheng
- M. Pan
Organizations
- University of Cincinnati