Negative Differential Resistance of InGaAs Dual Channel Transistors

Abstract

We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In(0.53)Ga(0.47)As quantum well, a 2 nm In(0.52)Al(0.48)As barrier layer, and a low mobility 1 nm In(0.26)Ga(0.74)As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to high-frequency, high-speed, and low-power consumption devices.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA464546

Entities

People

  • K. Komori
  • K. Yonei
  • S. Hori
  • T. Sugaya
  • T. Yamane

Organizations

  • National Institute of Advanced Industrial Science and Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Conduction Bands
  • Dual Channel
  • Electron Beam Lithography
  • Electron Mobility
  • Electrons
  • Energy
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Mobility
  • Photolithography
  • Quantum Wells
  • Resistance
  • Semiconductors
  • Transistors
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing