Crested Tunnel Barriers for Fast, Scalable, Nonvolatile Semiconductor Memories (Theme 3)

Abstract

The main objective of this project was the experimental demonstration of the theoretically predicted enhanced quantum-mechanical tunneling through layered ("crested") barriers. If demonstrated in silicon-compatible materials with sufficient endurance under electric stress, this effect may enable high-density, high-speed nonvolatile memories that may potentially replace DRAM as the main random access memories of semiconductor electronics. With that objective, we have combined the expertise at Stony Brook University in crested barrier theory (Prof. Konstantin Likharev) and aluminum oxide layer growth (Prof. James Lukens, Dr. Vijay Patel) with that of Yale University (Prof. T.P. Ma, Dr. X. Wang) in jet vapor deposition of silicon nitride and silicon dioxide films, as well as in nonvolatile memory technology.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2006
Accession Number
ADA464986

Entities

People

  • Konstantin K. Likharev
  • Tso-ping Ma

Organizations

  • State University of New York

Tags

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Band Structures
  • Base Pressure
  • Ceramic Materials
  • Dielectric Films
  • Dielectrics
  • Electrical Properties
  • Electronics
  • Energy Bands
  • Experimental Data
  • Fabrication
  • Films
  • Materials
  • Measurement
  • Oxidation
  • Oxides
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing