Study on Wide-gap Gallium-nitride Based Films and Their Quantum-dots Devices

Abstract

Wide-gap III-Nitride based white light emission had been proven to yield luminescence efficiency (20-30 Lumen/W) and the III-Nitride devices proved long lifetime (>10khr). It is expected that high efficiency III-Nitride based white light emission will be the major lighting source for daily illumination in the coming decades. In 1998, the world energy consumption of energy is 69,000 TWh. There had been 2300 TWh consumption in illumination with rather inefficiently way. To further largely improve the luminescence efficiency beyond 100 Lumen/W and to increase thermal stability of the III-Nitride based LED, devices in the quantum structure is the viable way to pursuit.

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Document Details

Document Type
Technical Report
Publication Date
Sep 05, 2006
Accession Number
ADA468270

Entities

People

  • Brian Yei
  • Huey-liang Hwang
  • Jung-min Hwang
  • Kuan-feng Lee

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemistry
  • Compound Semiconductors
  • Crystallography
  • Crystals
  • Efficiency
  • Electronics
  • Energy Bands
  • Light Sources
  • Materials
  • Materials Science
  • Modules (Electronics)
  • Optical Properties
  • Quantum Dots
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductors

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing