Photo-Electron Multiplier on the Basis of Multilayered Semiconductor Structure

Abstract

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a reverse biased pn-i-pn structure [1]. The mathematical model and computer simulation results are presented for various versions and regimes of Semiconductor Photo Electron Multiplier (SPEM) for different semiconductor materials. Besides SPEM performance evaluation and comparison with those of conventional devices are presented.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2005
Accession Number
ADA469517

Entities

People

  • Konstantin Lukin

Organizations

  • National Academy of Sciences

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Computer Simulations
  • Computers
  • Detection
  • Electron Multipliers
  • Electronics
  • Electrons
  • Energy Bands
  • Mathematical Models
  • Models
  • Optoelectronic Devices
  • P-N Junctions
  • Photoelectrons
  • Semiconductors
  • Simulations
  • Test And Evaluation
  • Voltage

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics