Integrated Silicon Optical Receiver with Avalanche Photodiode
Abstract
An optical receiver consisting of an avalanche photodiode integrated with a trans-impedance amplifier is reported. The optical receiver was fabricated on a 2 micrometers thick SOI substrate in a 130 nm unmodified CMOS process flow. the unity gain external quantum efficiency of the photodetectors was ~10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted or 5 dB improvement in receiver Sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2005
- Accession Number
- ADA471343
Entities
People
- J. C. Campbell
- J. D. Schaub
- J. Mogab
- S. M. Csutak
- Shuo Wang
Organizations
- University of Texas at Austin