1.3 micrometers Wavelength Vertical Cavity Surface Emitting Laser Fabricated by Orientation-Mismatched Wafer Bonding: A Prospect for Polarization Control

Abstract

We propose and demonstrate a long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of a (311)B InP-based active region and (100) GaAs-based distributed Bragg reflectors (DBRs), with an aim to control the in-plane polarization of output power. Crystal growth on (311)B InP substrates was performed under low-migration conditions to achieve good crystalline quality. The VCSEL was fabricated by wafer bonding, which enables us to combine different materials regardless of their lattice and orientation mismatch without degrading their quality. The VCSEL was polarized with a power extinction ratio of 31 dB.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2005
Accession Number
ADA471434

Entities

People

  • John E. Bowers
  • Jon Geske
  • Kian-giap Gan
  • Steven P. DenBaars
  • Yae L. Okuno
  • Yi-jen Chiu

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Distributed Bragg Reflectors
  • Lasers
  • Light Sources
  • Linear Polarization
  • Long Wavelengths
  • Low Temperature
  • Materials
  • Orientation (Direction)
  • Photonics
  • Polarization
  • Semiconductor Lasers
  • Surface Emitting Lasers

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Radar Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy