Multifunctional Oxide Films for Advanced Multifunction RF Systems

Abstract

The Electro-Optics Center of the Pennsylvania State University procured and established a custom-designed molecular beam epitaxy (MBE) system and commenced growth of oxide (TiO2, STO, BTO, BST and MgO) and III-nitride (AIN, GaN) thin films, The growth parameters and layer properties of these films were investigated by various in-situ and ex-situ characterization techniques under the aspect of developing a AIGaN HEMT epitaxy process, a BST varactor epitaxy process and aiding the integration of BST epitaxy on III-nitride templates using MgO buffer layers. Methods for the dielectric characterization of the epitaxial oxide films have been evaluated and applied in collaboration with Dr. Lanagan (Penn State Materials Research Laboratory).

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 14, 2007
Accession Number
ADA473061

Entities

People

  • Volker D. Heydemann

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Synthesis
  • Chemistry
  • Crystal Growth
  • Crystals
  • Detectors
  • Dielectrics
  • Electro-Optics
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Optics
  • Oxide Films
  • Semiconductors
  • Silicon Carbide
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Software Engineering