Accurate Evaluation of Nonlinear Absorption Coefficients in InAs, InSb and HbCdTe Alloys (Postprint)

Abstract

We present a full band structure calculation of temperature- and wavelength-dependent two-photon absorption (TPA) coefficients and free carrier absorption (FCA) cross sections in InAs, InSb, and Hg1−xCdxTe alloys. Although the wavelength dependence of the TPA coefficients agrees well with Wherrett expression, the accurately calculated values are smaller by a factor of 1.2 to 2.5. In addition, the TPA coefficient depends sensitively on the photoexcited carrier density in small gap material. The FCA is dominated by holes. The FCA cross section is independent of carrier density, but is strongly dependent on temperature. The calculated coefficients and lifetimes are fitted to closed form expressions and used in solving the rate equation to obtain the transmitted pump and probe intensities as functions of incident intensity and sample thickness. The calculated pump transmission and time-dependent probe transmission in InAs agree very well with the measured values.

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Document Details

Document Type
Technical Report
Publication Date
Jun 06, 2007
Accession Number
ADA473809

Entities

People

  • Leonel P. Gonzales
  • Shekhar Guha
  • Srinivasan Krishnamurthy
  • Zhi G. Yu

Organizations

  • SRI International

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Electron Density
  • Electrons
  • Energy Bands
  • Equations
  • Fermi Levels
  • Materials
  • Photoexcitation
  • Semiconductors
  • Sorption
  • Spin-Orbit Interaction
  • Two Photon Absorption

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Materials Science and Engineering.
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